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| STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") VRSM VDSM V STD/SDT320GK08 900 STD/SDT320GK12 1300 STD/SDT320GK14 1500 STD/SDT320GK16 1700 STD/SDT320GK18 1900 Type VRRM VDRM V 800 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0 2 Test Conditions Maximum Ratings 500 320 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=960A 9200 9800 8000 8600 420000 400000 320000 306000 100 A i dt TVJ=45oC VR=0 TVJ=TVJM VR=0 A2s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A diG/dt=1A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=320A 500 1000 120 60 20 10 -40...+140 140 -40...+125 t=1min t=1s 3000 3600 2.5-5/22-44 12-15/106-132 320 V/us W W V o TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us C V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M8) Typical including screws STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol IRRM IDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM TVJ=125oC; IT, IF=400A; -di/dt=50A/us typ. o o Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM IT, IF=600A; TVJ=25oC For power-loss calculations only (TVJ=140 C) o o Characteristic Values 70 40 1.32 0.8 0.82 Unit mA mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 VD=6V; VD=6V; TVJ=TVJM; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM 2 3 150 200 0.25 10 200 150 2 200 760 275 0.112 0.056 0.152 0.076 12.7 9.6 50 FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2t versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 4 Gate trigger characteristics 3 x STD/SDT320 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT320 0.15 K/W Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 30 DC ZthJC 0.10 RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.112 0.113 0.114 0.115 0.115 0.05 Constants for ZthJC calculation: i 0 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.003 0.0143 0.0947 ti (s) 0.099 0.168 0.456 t 1 2 3 0.20 K/W ZthJK 0.15 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 30 DC RthJK for various conduction angles d: d RthJK (K/W) 0.152 0.154 0.154 0.155 0.155 DC 180oC 120oC 60oC 30oC 0.10 0.05 Constants for ZthJK calculation: i 0 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.003 0.0143 0.0947 0.04 ti (s) 0.099 0.168 0.456 1.36 t 1 2 3 4 |
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